DocumentCode :
1630312
Title :
Mass production of quartz high-speed chemical etching applied to AT-cut wafers
Author :
Watanabe, Takaya
Author_Institution :
World Technol. Instrum. Co. Ltd, Yokohama, Japan
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
368
Lastpage :
375
Abstract :
The phenomenon in which etch pits and etch channels did not generate the required etching rate of an AT-cut quartz crystal wafer by carrying out etching at a rate lower than the growth speed of crystal was discovered. The high-speed chemical etching process examined, including lapping to polishing of the crystal wafers, was performed in less than 4 minutes. As a condition for which a mirror surface is possible, the ultra-clean washing method of removing contamination of the crystal wafer before etching was shown to be an important element. The manufacturing process for carrying out batch processing of the crystal wafer of #2000 finish after cutting by this high-speed chemical etching was shown, and mass production was made possible. The high-speed chemical etching. method is applied also to 2 μm thickness thin crystal wafer production used at higher operating frequencies
Keywords :
crystal resonators; electron device manufacture; etching; quartz; surface cleaning; 4 min; AT-cut quartz crystal wafer; SiO2; contamination removal; etch channels; etch pits; etching speed; high-speed chemical etching; manufacture process; mass production; mirror surface; ultra-clean washing method; Chemical elements; Chemical processes; Chemical products; Etching; Frequency; Lapping; Manufacturing processes; Mass production; Mirrors; Surface contamination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location :
Seattle, WA
ISSN :
1075-6787
Print_ISBN :
0-7803-7028-7
Type :
conf
DOI :
10.1109/FREQ.2001.956251
Filename :
956251
Link To Document :
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