Title :
NiCr fuse reliability-a new approach
Author_Institution :
Harris Semicond., Melbourne, FL, USA
Abstract :
Presents one technique to apply concurrent engineering in the development of a reliable fuse element in CMOS PROMs. The development required both a new circuit and process design. The five stages presented were used to produce a reliable fuse element that is also manufacturable. The use of these techniques uncovered several limitations in the circuit early enough in the development to be corrected. One reported in this paper was the poor current gain of the fusing bipolar transistor.
Keywords :
CMOS memory circuits; PROM; cellular arrays; chromium alloys; concurrent engineering; electric fuses; integrated circuit design; integrated circuit reliability; nickel alloys; CMOS PROMs; NiCr; concurrent engineering; current gain; fuse reliability; fusing bipolar transistor; process design; Concurrent engineering; Fabrication; Fuses; Integrated circuit reliability; Joining processes; Manufacturing processes; Nonvolatile memory; PROM; Resistors; Voltage;
Conference_Titel :
Southcon/94. Conference Record
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-9988-9
DOI :
10.1109/SOUTHC.1994.498110
