• DocumentCode
    1630463
  • Title

    A method to extract parameters in a generalized two-terminal device

  • Author

    Ortiz-Conde, Adelmo ; Sánchez, F. J García ; Liou, J.J. ; Andrian, J. ; Laurence, R.J. ; Schmidt, P.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
  • fYear
    1994
  • Firstpage
    262
  • Lastpage
    265
  • Abstract
    A simple technique, based on integrating the current-voltage characteristics, is proposed to determine series resistance and other device parameters of a two-terminal device. The case of the diode is used to illustrate the usefulness of the technique.
  • Keywords
    characteristics measurement; electric resistance measurement; semiconductor device models; semiconductor diodes; current-voltage characteristic; device parameter extraction; generalized two-terminal device; semiconductor diodes; series resistance; Current-voltage characteristics; Electric resistance; Equations; MOSFETs; Parameter extraction; Semiconductor devices; Semiconductor diodes; Thermal factors; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southcon/94. Conference Record
  • Conference_Location
    Orlando, FL, USA
  • Print_ISBN
    0-7803-9988-9
  • Type

    conf

  • DOI
    10.1109/SOUTHC.1994.498112
  • Filename
    498112