• DocumentCode
    1630490
  • Title

    The density of states distribution of a-Si1-xGex :H alloys

  • Author

    Pereira, Jorge Manuel Torres

  • Author_Institution
    Inst. Superior Tecnico, Tech. Univ. of Lisbon, Portugal
  • fYear
    1991
  • Firstpage
    194
  • Abstract
    A model for the density of states (DOS) in the gap of a-SiGe:H alloys is presented. The effects of Ge content and structure are considered. An increase of the DOS around midgap due to Ge and Si dangling bonds is observed. The conduction (CB) and valence band (VB) tails are exponential. The slope of the CB tail increases when the Ge content increases and the deposition temperature decreases, whereas the slope of the VB tail remains unaffected. The narrowing of the optical gap on alloying may be viewed as the combined shift, in the opposite direction, of the CB edge and the VB edge
  • Keywords
    Ge-Si alloys; amorphous semiconductors; dangling bonds; electronic density of states; energy gap; hydrogen; amorphous Si1-xGex:H alloys; conduction band tail; dangling bonds; density of states distribution; deposition temperature; optical gap; semiconductor; valence band tail; Alloying; Amorphous silicon; Atom optics; Germanium alloys; Interface states; Iron; Optical devices; Silicon alloys; Tail; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
  • Conference_Location
    LJubljana
  • Print_ISBN
    0-87942-655-1
  • Type

    conf

  • DOI
    10.1109/MELCON.1991.161757
  • Filename
    161757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630490