Title :
The process and performance of double doping polysilicon gate MOSFET
Author :
Lei, Fang ; Yuehua, Dai ; Junning, Chenm
Author_Institution :
Sch. of Electr. & Inf. Eng., Anhui Univ., Hefei, China
Abstract :
In early days, our project team has analyzed the electric field, threshold voltage, capacitance, cut-off frequency and other characteristics of the double doping polysilicon gate MOSFET (DDPG-MOS), see references. In this study, the process steps of DDPG-MOS are designed and simulated with software TSUPREM. Then the frequency and transient characteristic of the device are analyzed using software MEDICI. The results show that, the process of DDPG-MOS is completely compatible with CMOS, and its performances are improved significantly. Specially, DDPG-MOS has a wider frequency range and faster response speed, which has good application prospects in the RF field.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor process modelling; transient analysis; CMOS process; MEDICI; TSUPREM; cut-off frequency; double doping polysilicon gate MOSFET; electric field; threshold voltage; transient characteristic; DDPG-MOSFET; Process simulation; frequency characteristics; transient characteristic;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667395
