DocumentCode
1630563
Title
An overview of failure mechanisms in embedded flash memories
Author
Ginez, O. ; Daga, J.-M. ; Combe, M. ; Girard, P. ; Landrault, C. ; Pravossoudovitch, S. ; Virazel, A.
Author_Institution
Dept. of Libraries & Design Tools, ATMEL Rousset
fYear
2006
Lastpage
113
Abstract
Non-volatile flash memories are becoming more and more popular for system-on-chip design (SoC). Embedded flash (eFlash) memories are based on the floating-gate transistor concept and can be subject to complex hard defects creating functional faults. Studies of realistic failure mechanisms and their associated fault models are the first mandatory step before providing efficient and practical new test methods. In this paper, we present an analysis made on actual failures occurring in 2T FLOTOX cells of 0.15mum NOR-based embedded flash structure
Keywords
embedded systems; flash memories; logic gates; system-on-chip; transistor circuits; 0.15 micron; 2T FLOTOX cells; NOR-based embedded flash structure; embedded flash memories; floating-gate transistor; system-on-chip; Failure analysis; Flash memory; Libraries; Nonvolatile memory; Random access memory; Silicon; System-on-a-chip; Testing; Uniform resource locators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium, 2006. Proceedings. 24th IEEE
Conference_Location
Berkeley, CA
Print_ISBN
0-7695-2514-8
Type
conf
DOI
10.1109/VTS.2006.19
Filename
1617571
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