Title :
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain
Author :
Amat, E. ; Rodríguez, R. ; González, M.B. ; Martín-Martínez, J. ; Nafría, M. ; Aymerich, X. ; Machkaoutsan, V. ; Bauer, M. ; Verheyen, P. ; Simoen, E.
Author_Institution :
Electron. Eng. Dept., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.
Keywords :
MOSFET; hot carriers; silicon compounds; SiC; SiGe; channel hot-carrier degradation; embedded source-drain; strained MOSFET; uniaxially strained nMOS samples; uniaxially strained pMOS samples; Degradation; Impact ionization; MOSFETs; Silicon carbide; Silicon germanium; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667396
