Title :
Chamberless plasma enhanced chemical vapor deposition of BPSG films
Author :
Wang, S. ; Xu, X. ; Yin, M. ; Zhao, L.
Author_Institution :
Chinese Acad. of Sci., Beijing
Abstract :
Summary form only given. In this paper, atmospheric pressure plasma enhanced chemical vapor deposition AP-PECVD) process has been used to grow boro-phospho-silicate glass (BPSG) on the silicon wafer. The component fraction of the three precursors (tetraethoxysilane, triethylphosphate and triethylborate) was optimized according to quality of BPSG films from the XPS and FT-IR results. The effects of the RF power and oxygen flow rate on deposition rate were also studied. Reactive gaseous species were obtained by optical emission spectroscopy to reveal the possible process of BPSG films deposition. In summary, the atmospheric pressure plasma is a promising tool for the BPSG thin film deposition.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; borosilicate glasses; infrared spectra; phosphosilicate glasses; plasma CVD; plasma materials processing; BPSG film; FTIR spectra; RF power; XPS; boro-phospho-silicate glass; chamberless plasma enhanced chemical vapor deposition atmospheric pressure PECVD; optical emission spectroscopy; oxygen flow rate; silicon wafer; tetraethoxysilane; triethylborate; triethylphosphate; Atmospheric-pressure plasmas; Chemical vapor deposition; Glass; Optical films; Plasma chemistry; Radio frequency; Silicon; Spectroscopy; Sputtering; Stimulated emission;
Conference_Titel :
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0915-0
DOI :
10.1109/PPPS.2007.4346138
