A 24GHz CMOS VCO with DTMOS Technique

Author

Lv, Hongming ; Qian, He

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2010

Firstpage

746

Lastpage

748

Abstract

A 24 GHz voltage-controlled oscillator designed in IBM 90nm standard CMOS technology is presented. This VCO innovatively adopts Dynamic Threshold MOSFET (DTMOS) structure in its cross-coupled pair transistors to attain larger transconductance. Forward biasing of Body-Source junction further enhances overdrive voltage by minimizing threshold voltage. Tail current source is removed to achieve low supply voltage. Post-layout simulation shows power dissipation to be less than 2mW and phase noise to reach -102.8dBc/Hz at 1MHz offset. The attained FOM is -188.

Keywords

CMOS analogue integrated circuits; MMIC oscillators; MOSFET; field effect MMIC; voltage-controlled oscillators; DTMOS technique; IBM standard CMOS technology; VCO; body-source junction; cross-coupled pair transistors; dynamic threshold MOSFET structure; frequency 1 MHz; frequency 24 GHz; overdrive voltage enhancement; size 90 nm; threshold voltage minimization; voltage-controlled oscillator; CMOS integrated circuits; CMOS technology; Phase noise; Threshold voltage; Transistors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667401

Filename

5667401