Title :
Effects of oxide charge and surface recombination velocity on the excess base current of BJTs
Author :
Koiser ; Schrimpf, R.D. ; Wei, A. ; DeLaus, M. ; Fleetwood, D.M. ; Combs, W.E.
Author_Institution :
Univ. of Arizona, Tucson, AZ, USA
Abstract :
The role of net positive oxide trapped charge and surface recombination velocity on excess base current in bipolar junction transistors (BJTs) is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed
Keywords :
bipolar transistors; X-ray irradiated; base-emitter voltage; bipolar junction transistors; excess base current; hot electron-induced degradation; ionizing-radiation-induced degradation; net positive oxide trapped charge; surface recombination velocity; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617500
