DocumentCode
1630817
Title
BJT forward bias degradation effects and mechanisms: A gain and noise study
Author
Sun, C. Jack ; Grotjohn, T.A. ; Huang, C.-J. ; Reinhard, D.K. ; Yu, C.-C.W.
Author_Institution
Electr. Eng. Dept., Michigan State Univ., E. Lansing, MI, USA
fYear
1993
Firstpage
215
Lastpage
218
Abstract
Bipolar junction transistor (BJT) noise and gain changes under forward bias stress are presented for three fabrication technologies. The combination of a high current and a high temperature produced electromigration which caused an initial 1/f noise decrease. The noise behavior offers a method for distinguishing between hot-electron and electromigration induced degradation
Keywords
bipolar transistors; 1/f noise decrease; BJT; electromigration; forward bias degradation effects; forward bias stress; gain changes; high current; high temperature; noise behavior; Bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617501
Filename
617501
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