An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

Author

Van Bui, H. ; Wiggers, F.B. ; de Jong, M.P. ; Kovalgin, A.Y.

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2014

fDate

24-27 March 2014

Firstpage

53

Lastpage

57

Abstract

We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

Keywords

electrical contacts; electrochemical electrodes; oxidation; passivation; platinum; silicon; thin films; titanium compounds; Pt; Si; TiN; electrical contact; electrical properties; in-situ capping layer; native oxidation; nonconducting amorphous silicon layer; platinum electrodes; silicidation reaction; ultrathin conducting films; Annealing; Conductivity; Electrodes; Films; III-V semiconductor materials; Oxidation; Tin; amorphous silicon; resistivity; silicidation; surface passivation; titanium nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2014 International Conference on

Conference_Location

Udine

ISSN

1071-9032

Print_ISBN

978-1-4799-2193-5

Type

conf

DOI

10.1109/ICMTS.2014.6841467

Filename

6841467