Title :
Including the effects of process-related variability on radiation response using a new test chip
Author :
Li, Yanfeng ; Rezzak, Nadia ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Zhang, EnXia ; Wu, Yanjun ; Cai, Shuang ; Wang, Jingqiu ; Wang, Donglin
Author_Institution :
Accelicon Technol., Inc., Cupertino, CA, USA
Abstract :
Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
Keywords :
foundries; leakage currents; radiation effects; transistors; TID-induced leakage current; device measurements; foundry processes; radiation response; test chip; total-ionizing dose response; transistor mismatch; Arrays; Current measurement; Layout; Leakage current; Logic gates; Radiation effects; Transistors; Mismatch; Process Design Kit; Process Variability; Radiation effects; Stress; TID;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667408
