• DocumentCode
    163096
  • Title

    Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure

  • Author

    Yue Pan ; Collins, Aaron M. ; Leech, Patrick W. ; Reeves, Geoffrey K. ; Holland, Anthony S. ; Tanner, Philip

  • Author_Institution
    Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia
  • fYear
    2014
  • fDate
    24-27 March 2014
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corresponding methodology, is (0.8-5.7)×10-6 Ω·cm2.
  • Keywords
    electrical contacts; nickel; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC:Ni; contact circular test structure; deposited nickel; doped n-type 3-C silicon carbide; low specific contact resistivity; Conductivity; Electrodes; Mathematical model; Nickel; Resistance; Silicon carbide; Transmission line measurements; circular transmission line model; contact resistance; silicon carbide; specific contact resistivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2014 International Conference on
  • Conference_Location
    Udine
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4799-2193-5
  • Type

    conf

  • DOI
    10.1109/ICMTS.2014.6841471
  • Filename
    6841471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=163096