A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

Author

Li, Mingliang ; Dong, Shurong ; Miao, Meng ; Song, Bo ; Ma, Fei ; Han, Yan

Author_Institution

Dept. of ISEE, Zhejiang Univ., Hangzhou, China

fYear

2010

Firstpage

1633

Lastpage

1635

Abstract

A capacitance coupling complementation silicon controlled rectifies (CCCSCR) for electrostatic discharge (ESD) protection application is proposed and verified in 0.5μm BCD process. Compared with traditional complementation silicon controlled rectifies (CSCR), the CCCSCR has a lower trigger voltage. The coupling capacitance, as a tunable trigger of SCR, can meet different protection application demands. And the CCCSCR can fulfill all dual direction ESD stress mode protection, including I/O-VSS, I/O-VDD and VDD-VSS.

Keywords

BiCMOS integrated circuits; circuit tuning; coupled circuits; electrostatic discharge; thyristors; trigger circuits; BCD process; CCCSCR; ESD protection; capacitance coupling complementation SCR; coupling capacitance; dual direction ESD stress mode protection; on-chip electrostatic discharge protection; silicon controlled rectifier; size 0.5 mum; trigger voltage; tunable trigger; Breakdown voltage; Capacitance; Couplings; Electrostatic discharge; Resistance; Stress; Thyristors; CSCR; Capacitance coupling; ESD; trigger voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667411

Filename

5667411