Title :
A capacitance coupling complementation SCR for on-chip electrostatic discharge protection
Author :
Li, Mingliang ; Dong, Shurong ; Miao, Meng ; Song, Bo ; Ma, Fei ; Han, Yan
Author_Institution :
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
A capacitance coupling complementation silicon controlled rectifies (CCCSCR) for electrostatic discharge (ESD) protection application is proposed and verified in 0.5μm BCD process. Compared with traditional complementation silicon controlled rectifies (CSCR), the CCCSCR has a lower trigger voltage. The coupling capacitance, as a tunable trigger of SCR, can meet different protection application demands. And the CCCSCR can fulfill all dual direction ESD stress mode protection, including I/O-VSS, I/O-VDD and VDD-VSS.
Keywords :
BiCMOS integrated circuits; circuit tuning; coupled circuits; electrostatic discharge; thyristors; trigger circuits; BCD process; CCCSCR; ESD protection; capacitance coupling complementation SCR; coupling capacitance; dual direction ESD stress mode protection; on-chip electrostatic discharge protection; silicon controlled rectifier; size 0.5 mum; trigger voltage; tunable trigger; Breakdown voltage; Capacitance; Couplings; Electrostatic discharge; Resistance; Stress; Thyristors; CSCR; Capacitance coupling; ESD; trigger voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667411
