A switchable dual-band LNA with simultaneous noise and input impedance matching for GSM/TD-SCDMA applications

Author

Wang, Hongrui ; Zeng, Dajie ; Yang, Dongxu ; Zhang, Li ; Wang, Yan ; Yu, Zhiping

Author_Institution

Dept. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2010

Firstpage

767

Lastpage

769

Abstract

A switchable dual-band low power low noise amplifier operated at 900MHz/1.95GHz has been designed for GSM/TD-SCDMA applications using 0.13 μm CMOS process. To achieve noise matching and input matching at both bands, a tunable capacitance bank and a switchable inductor for L-match are utilized. Four gain modes are accommodated with current splitting technique at the second stage. The post-layout simulated results are gains of 26.5 dB and 25.2 dB, and noise figures of 1.85 dB and 2.05 dB at the two frequency bands, respectively. The total power consumption is 7.5 mW under 1.2 V voltage supply.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; cellular radio; code division multiple access; impedance matching; integrated circuit layout; integrated circuit noise; low noise amplifiers; low-power electronics; switching circuits; CMOS process; GSM; L-match; TD-SCDMA application; frequency 1.95 GHz; frequency 900 MHz; input impedance matching; low power low noise amplifier; noise matching; post-layout simulation; power consumption; size 0.13 mum; switchable dual-band LNA; switchable inductor; tunable capacitance bank; Dual band; Gain; Impedance; Impedance matching; Logic gates; Noise; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667412

Filename

5667412