DocumentCode
1631018
Title
A dynamic thermo-feedback model for bipolar transistor
Author
Liang, Ji-Fuh ; Lin, H.C. ; Petrosky, K.J.
Author_Institution
Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
fYear
1993
Firstpage
245
Lastpage
248
Abstract
A compact bipolar transistor model is proposed to analyze the thermal effect on the device operations. The rise of working temperature is modeled as a feedback voltage to modify the operation of the transistor. Basic structure of the model is composed of two transistors, one for base-collector junction characterization, the other for base-emitter characterization. The principle is described and the model is successfully implemented on SPICE3. DC, AC and transient analyses are all included. Excellent agreement between the model and the experimental data of dynamic output characteristics of a microwave power transistor justifies the model
Keywords
microwave bipolar transistors; AC analysis; DC analysis; SPICE3; bipolar transistor; dynamic output characteristics; dynamic thermo-feedback model; equivalent circuit; feedback voltage; microwave power transistor; rise of working temperature; transient analyses; Semiconductor device thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617508
Filename
617508
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