Title :
Study of high-gate-voltage stress using the reverse gated-diode current measurement in LDD n-type and p-type MOSFET´s
Author :
Chen, Haifeng ; Ma, Xiaohua ; Du, Huimin ; Guo, Lixin ; Shang, Shiguang ; Xie, Duan
Author_Institution :
Sch. of Electron. Eng., Xi´´an Univ. of Posts & Telecommun., Xi´´an, China
Abstract :
The reverse generation current under high gate voltage stress condition in LDD MOSFET has been studied. It is found that the generation current peak decreases as the stress time increases. It ascribes to the dominating oxide trapped electrons in n-MOSFET and trapped holes in p-MOSFET which reduce the effective drain bias so that lowering the maximal generation rate. The density of the effective trapped electrons in n-MOSFET and holes in p-MOSFET affecting the effective drain bias are calculated by using our model.
Keywords :
MOSFET; electric current measurement; semiconductor diodes; LDD n-type MOSFET; LDD p-type MOSFET; drain bias; high-gate-voltage stress; oxide trapped electron; reverse gated-diode current measurement; reverse generation current; voltage stress; Electron traps; Equations; Interface states; MOSFET circuits; Mathematical model; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667414
