Title :
The effect of thermal shunt on the current instability of multiple-emitter-finger heterojunction bipolar transistors
Author :
Liou, L.L. ; Bayraktaroglu, B. ; Huang, C.I. ; Barrette, J.
Author_Institution :
Wright Lab., Wright-Patterson AFB, OH, USA
Abstract :
The occurrence of thermally-induced current instability in multi-emitter-finger heterojunction bipolar transistors (HBTs) is described. An equivalent thermal circuit is used to model the effect of thermal shunt on this current instability. It is shown that the thermal shunt is superior to the ballast resistor for improving power characteristics, without sacrificing microwave performance. An HBT implementing the thermal shunt technique has demonstrated a microwave power density of more than 10 mWspl mu/m2 of emitter area
Keywords :
heterojunction bipolar transistors; Gummel plot; effect of thermal shunt; equivalent thermal circuit; heterojunction bipolar transistors; junction temperature rise; microwave performance; microwave power density; multiple-emitter-finger; thermally-induced current instability; Heterojunction bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617510
