Title :
The properties of SiC in comparison with Si semiconductor devices
Author_Institution :
ENET - Energy Units for Utilization of non Traditional Energy Sources, VSB - Tech. Univ. of Ostrava, Ostrava, Czech Republic
Abstract :
The SiC - silicon carbide MOSFET has exclusive features thanks its become better switch than Si - silicon semiconductor switch. There are some special features that need to be understood for use to in full devices potential. The advantages and differences of SiC MOSFETs have been described in this article in compare with Si IGBT transistor.
Keywords :
MOSFET; elemental semiconductors; insulated gate bipolar transistors; semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; Si; Si IGBT transistor; SiC; silicon carbide MOSFET; silicon semiconductor switch; Insulated gate bipolar transistors; Logic gates; MOSFET; Schottky diodes; Silicon; Silicon carbide; Driver; IGBT; MOSFET; SBD; Si; SiC;
Conference_Titel :
Applied Electronics (AE), 2013 International Conference on
Conference_Location :
Pilsen
Print_ISBN :
978-80-261-0166-6
