Title :
Circuits to measure the delay variability of MOSFETs
Author :
Balakrishnan, K. ; Jenkins, Keith
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Two test circuits have been implemented and measured in order to characterize delay variability in individual MOSFETs. Measurement results show that both circuits have high sensitivities to gate resistance, which differentiate them from other circuits which characterize variations in traditional DC parameters such as threshold voltage and channel length.
Keywords :
MOSFET; delays; semiconductor device measurement; semiconductor device testing; DC parameters; MOSFET; channel length; delay variability; gate resistance; test circuits; threshold voltage; Arrays; Delays; Detectors; Electrical resistance measurement; Logic gates; Semiconductor device measurement; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4799-2193-5
DOI :
10.1109/ICMTS.2014.6841480
