DocumentCode
1631187
Title
An improved static NBTI Model with physical geometry scaling
Author
Zhang, Yue ; Li, Miao ; Li, Yan-Feng ; Ma, Xiao-Hua ; Cao, Yan-Rong ; Hao, Yue
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear
2010
Firstpage
1624
Lastpage
1626
Abstract
Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.
Keywords
CMOS integrated circuits; integrated circuit reliability; reaction-diffusion systems; silicon; CMOS technology; Si; Verilog-A; channel length; improved static NBTI model; negative bias temperature instability; physical geometry scaling; reaction-diffusion framework; Data models; Degradation; Geometry; MOSFETs; Mathematical model; Semiconductor device modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667420
Filename
5667420
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