Title :
Comparison of the on-resistance degradation in pLEDMOS with the different geometrical parameters
Author :
Sun, Hu ; Qian, Qin-Song ; Sun, Wei-Feng ; Liu, Si-Yang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
In this paper, the influence of the different length of the drift region and the field plate upon Hot-Carrier-Induced on-resistance (Ron) and threshold voltage (Vth) degradation in p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide has been investigated. It was concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation. However, increasing the length of field plate can reduce the degradation of both Ron and Vth. Technology computer-aided design (TCAD) simulations reveal that the improvement is due to the decrease of impact ionization rate and perpendicular electric field in the accumulation and channel region. It also has been found in this paper that hot carrier injection mostly appears in the first 103s and then begins to saturate.
Keywords :
MOSFET; hot carriers; semiconductor device models; technology CAD (electronics); drift region; electric field; geometrical parameters; hot-carrier-induced on-resistance; p-type lateral extended drain MOS; pLEDMOS transistor; technology computer-aided design; Degradation; Electric fields; Hot carriers; Impact ionization; Logic gates; Stress; Transistors; hot-carrier-induced degradation; on-resistance degradation; p-type lateral extended drain MOS (pLEDMOS); thick gate oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667423
