Title :
A single-photon avalanche diode test chip in 150nm CMOS technology
Author :
Pancheri, Lucio ; Dalla Betta, Gian-Franco ; Huf Campos Braga, Leo ; Hesong Xu ; Stoppa, David
Author_Institution :
DII, Univ. of Trento, Trento, Italy
Abstract :
The design of Single-Photon Avalanche Diode (SPAD) arrays requires a clear understanding of the correlation between the device characteristics and the geometrical and structural device parameters. This work presents a test chip, fabricated in a 150-nm CMOS technology, tailored to the extraction of the main features for SPADs of different shapes and sizes. Statistical results on breakdown voltage, Dark Count Rate and Photon Detection Probability are reported and discussed.
Keywords :
CMOS integrated circuits; avalanche photodiodes; electric breakdown; integrated circuit testing; photodetectors; CMOS technology; SPAD arrays; breakdown voltage; dark count rate; photon detection probability; single-photon avalanche diode arrays; single-photon avalanche diode test chip; size 150 nm; CMOS integrated circuits; CMOS technology; Feature extraction; Photonics; Semiconductor device measurement; Shape; Size measurement; CMOS technology; Photodetector; Single-Photon Avalanche Diode;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4799-2193-5
DOI :
10.1109/ICMTS.2014.6841486
