Title :
Investigation of tunneling field effect transistor reliability
Author :
Jiao, G.F. ; Huang, X.Y. ; Chen, Z.X. ; Cao, W. ; Huang, D.M. ; Yu, H.Y. ; Singh, N. ; Lo, G.Q. ; Kwong, D.-L. ; Li, Ming-Fu
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.
Keywords :
field effect transistors; semiconductor device reliability; HC degradations; PBTI degradations; conventional n-MOSFET; nanowire n type tunneling field effect transistor reliability; physical analysis; Degradation; Electric fields; Logic gates; Silicon; Stress; Temperature measurement; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667426
