Title :
Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si
Author :
Mohammadi, Vahid ; Ramesh, S. ; Nanver, Lis K.
Author_Institution :
Dept. Microelectron., Delft Univ. of Technol., Delft, Netherlands
Abstract :
Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.
Keywords :
boron; chemical vapour deposition; contact resistance; electric resistance measurement; elemental semiconductors; silicon; B; Si; angstrom level variations; deposited layers; metal contact arrays; millimeter large windows; resistance measurement structures; thickness evaluation; Conductivity; Electrical resistance measurement; Ellipsometry; Loading; Resistance; Silicon; Thickness measurement; Kelvin cross-bridge contact resistance measurement; chemical vapor deposition; loading effects; pure boron; resistivity; series resistance;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4799-2193-5
DOI :
10.1109/ICMTS.2014.6841492
