Title :
NBTI-related issues in deep submicron pMOSFETs
Author :
Yan, F. ; Ji, X. ; Liao, Y. ; Cheng, X. ; Zhu, X. ; Shi, Y. ; Zhang, D. ; Guo, Q.
Author_Institution :
Inst. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China
Abstract :
Negative Bias Temperature Instability (NBTI) is an important reliability problem in deep submicron PMOSFETs. In this paper, we review the recent literature on the possible theoretical foundations and experimental features of NBTI degradation. These features, including temperature activation energy, recovery and SILC under NBTI, actually reflect the different aspect of the same physics mechanism of NBTI. These findings are expected to provide new evidences for understanding the matter.
Keywords :
MOSFET; semiconductor device reliability; NBTI degradation; SILC; deep submicron pMOSFET reliability; negative bias temperature instability; temperature activation energy; E´ center; Hole Trapping; K center; Negative Base Temperature Instability (NBTI); SILC; interface state trap;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667429
