DocumentCode :
1631485
Title :
Recent progress in testing, characterization and protection for CDM ESD events
Author :
Zhou, Yuanzhong ; Righter, Alan W. ; Hajjar, Jean-Jacques
Author_Institution :
Analog Devices, Wilmington, MA, USA
fYear :
2010
Firstpage :
1604
Lastpage :
1607
Abstract :
This paper reviews the progress in testing standards, characterization methods as well as protection techniques against the Charge Device Model (CDM) ESD event. The paper also discusses recent development trends in this field.
Keywords :
electrostatic discharge; integrated circuit reliability; integrated circuit testing; CDM ESD events; characterization methods; integrated circuit reliability; protection techniques; testing standards; Electrostatic discharge; Integrated circuits; Logic gates; Monitoring; Stress; Testing; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667432
Filename :
5667432
Link To Document :
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