• DocumentCode
    1631508
  • Title

    Area and MIT optimization of selective Zigzag power gating

  • Author

    Kun, Huang ; Zuying, Luo

  • Author_Institution
    Coll. of Inf. Sci. & Technol., Beijing Normal Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    812
  • Lastpage
    814
  • Abstract
    Power Gating(PG) is very effective to reduce the leakage power. Recently proposed Zigzag power gating(ZPG) technique has the visible advantage on short wake-up time. However, additional PG transistors consume intolerable area overhead. Basing on the BPTM-65nm model, we propose a new optimization methodology of the selective ZPG technique for the wide-used dual-threshold voltage CMOS circuit design. We optimize the ZPG area overhead in two steps: First, according to the observation that the leakage of dual-threshold voltage CMOS circuit is mainly origin from logic gates of LVT(low threshold voltage) and DLS (determinant leakage state), we only cut off these gates to reduce the number of gates which need to be turn off. Second, we assign the size of footer and header with a new method to optimize the area overhead further. A large number of experimental data show that on average our method reduces ZPG area overhead from 26.8% to 8.3%, the minimum idle time (MIT) from 3795ps to 2594ps.
  • Keywords
    CMOS digital integrated circuits; integrated circuit design; area optimization; determinant leakage state; leakage power reduction; logic gates; low threshold voltage; minimum idle time optimization; power gating transistors; selective zigzag power gating; size 65 nm; time 3795 ps to 2594 ps; wide-used dual-threshold voltage CMOS circuit design; Delay; Leakage current; Logic gates; Optimization; Switches; Switching circuits; Transistors; Selective power gating; Zigzag power gating; dual-threshold Voltage circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667433
  • Filename
    5667433