• DocumentCode
    163158
  • Title

    A cross-coupled common centroid test structures layout method for high precision MIM capacitor mismatch measurements

  • Author

    Tuinhout, H. ; Wils, Nicole

  • Author_Institution
    Design Platforms Organ., NXP Semicond. - Central R&D, Eindhoven, Netherlands
  • fYear
    2014
  • fDate
    24-27 March 2014
  • Firstpage
    243
  • Lastpage
    248
  • Abstract
    A new test structure layout method utilizing highly symmetrical quadruple DUT-to-pad connection rails enables much higher precision DUT-1-2-1-2 MIM capacitors mismatch characterization and gives significantly smaller systematic mismatch errors compared to approaches attempted before. A record low random mismatch fluctuation standard deviation of 20 ppm (0.002%)is shown to be measurable for large MIM capacitor pairs.
  • Keywords
    MIM devices; capacitors; semiconductor device testing; DUT-1-2-1-2 MIM capacitors; MIM capacitor mismatch measurements; common centroid test structures layout method; low random mismatch fluctuation; quadruple DUT-to-pad connection; systematic mismatch errors; Capacitance; Capacitors; Fluctuations; Layout; Rails; Sociology; Standards; MIM-capacitor; common-centroid layout; matching; microelectronic test structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2014 International Conference on
  • Conference_Location
    Udine
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4799-2193-5
  • Type

    conf

  • DOI
    10.1109/ICMTS.2014.6841500
  • Filename
    6841500