DocumentCode :
163158
Title :
A cross-coupled common centroid test structures layout method for high precision MIM capacitor mismatch measurements
Author :
Tuinhout, H. ; Wils, Nicole
Author_Institution :
Design Platforms Organ., NXP Semicond. - Central R&D, Eindhoven, Netherlands
fYear :
2014
fDate :
24-27 March 2014
Firstpage :
243
Lastpage :
248
Abstract :
A new test structure layout method utilizing highly symmetrical quadruple DUT-to-pad connection rails enables much higher precision DUT-1-2-1-2 MIM capacitors mismatch characterization and gives significantly smaller systematic mismatch errors compared to approaches attempted before. A record low random mismatch fluctuation standard deviation of 20 ppm (0.002%)is shown to be measurable for large MIM capacitor pairs.
Keywords :
MIM devices; capacitors; semiconductor device testing; DUT-1-2-1-2 MIM capacitors; MIM capacitor mismatch measurements; common centroid test structures layout method; low random mismatch fluctuation; quadruple DUT-to-pad connection; systematic mismatch errors; Capacitance; Capacitors; Fluctuations; Layout; Rails; Sociology; Standards; MIM-capacitor; common-centroid layout; matching; microelectronic test structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location :
Udine
ISSN :
1071-9032
Print_ISBN :
978-1-4799-2193-5
Type :
conf
DOI :
10.1109/ICMTS.2014.6841500
Filename :
6841500
Link To Document :
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