DocumentCode
163158
Title
A cross-coupled common centroid test structures layout method for high precision MIM capacitor mismatch measurements
Author
Tuinhout, H. ; Wils, Nicole
Author_Institution
Design Platforms Organ., NXP Semicond. - Central R&D, Eindhoven, Netherlands
fYear
2014
fDate
24-27 March 2014
Firstpage
243
Lastpage
248
Abstract
A new test structure layout method utilizing highly symmetrical quadruple DUT-to-pad connection rails enables much higher precision DUT-1-2-1-2 MIM capacitors mismatch characterization and gives significantly smaller systematic mismatch errors compared to approaches attempted before. A record low random mismatch fluctuation standard deviation of 20 ppm (0.002%)is shown to be measurable for large MIM capacitor pairs.
Keywords
MIM devices; capacitors; semiconductor device testing; DUT-1-2-1-2 MIM capacitors; MIM capacitor mismatch measurements; common centroid test structures layout method; low random mismatch fluctuation; quadruple DUT-to-pad connection; systematic mismatch errors; Capacitance; Capacitors; Fluctuations; Layout; Rails; Sociology; Standards; MIM-capacitor; common-centroid layout; matching; microelectronic test structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location
Udine
ISSN
1071-9032
Print_ISBN
978-1-4799-2193-5
Type
conf
DOI
10.1109/ICMTS.2014.6841500
Filename
6841500
Link To Document