DocumentCode
1631840
Title
Performance variations of ballistic and quasi-ballistic MOSFETs - Analytical variation model for virtual source potential and kT-Layer Length -
Author
Mizuno, T. ; Toriumi, A.
Author_Institution
Kanagawa Univ., Hiratsuka, Japan
fYear
2010
Firstpage
847
Lastpage
850
Abstract
We have studied analytical model for performance variations of an extremely thin SOI-FET (ETSOI-FET) with an intrinsic Si (i-Si) channel in ballistic and quasi-ballistic regions, because ETSOIs are candidate for suppressing the performance variations as well as Coulomb scattering of carriers in the channel. It is newly found that drain current in ballistic ETSOIs still fluctuates even in an i-Si channel, which is due to dopant fluctuation in source/drain (S/D) extensions.
Keywords
MOSFET; elemental semiconductors; silicon; silicon-on-insulator; Coulomb scattering; Si; ballistic MOSFET; dopant fluctuation; extremely thin SOI-FET; kT-layer length; quasiballistic MOSFET; source-drain extensions; virtual source potential; Analytical models; FETs; Fluctuations; Neodymium; Performance evaluation; Resource description framework; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667448
Filename
5667448
Link To Document