Title :
Performance variations of ballistic and quasi-ballistic MOSFETs - Analytical variation model for virtual source potential and kT-Layer Length -
Author :
Mizuno, T. ; Toriumi, A.
Author_Institution :
Kanagawa Univ., Hiratsuka, Japan
Abstract :
We have studied analytical model for performance variations of an extremely thin SOI-FET (ETSOI-FET) with an intrinsic Si (i-Si) channel in ballistic and quasi-ballistic regions, because ETSOIs are candidate for suppressing the performance variations as well as Coulomb scattering of carriers in the channel. It is newly found that drain current in ballistic ETSOIs still fluctuates even in an i-Si channel, which is due to dopant fluctuation in source/drain (S/D) extensions.
Keywords :
MOSFET; elemental semiconductors; silicon; silicon-on-insulator; Coulomb scattering; Si; ballistic MOSFET; dopant fluctuation; extremely thin SOI-FET; kT-layer length; quasiballistic MOSFET; source-drain extensions; virtual source potential; Analytical models; FETs; Fluctuations; Neodymium; Performance evaluation; Resource description framework; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667448
