DocumentCode :
1631855
Title :
Physics of metal silicides: Stability, stoichiometry, and schottky barrier control
Author :
Nakayama, Takashi ; Machida, Yoshiaki ; Sotome, Shinichi
Author_Institution :
Dept. of Phys., Chiba Univ., Chiba, Japan
fYear :
2010
Firstpage :
851
Lastpage :
854
Abstract :
Using theoretical calculations, we explain why some metal atoms like Ni produce bulk silicides and the others such as Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases, and how the dopants change Schottky barrier. It is shown that the keys to answer these questions are (i) the electron transfer from Si-p to metal-atom-d orbitals and (ii) the energy losses by elastic strain and bond-breaking at the interface.
Keywords :
Schottky barriers; atomic structure; silicon; stoichiometry; Schottky barrier control; Si; bond-breaking; elastic strain; electron transfer; metal silicides; metal-atom-d orbitals; stability; stoichiometry; Nickel; Schottky barriers; Silicides; Silicon; Strain; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667449
Filename :
5667449
Link To Document :
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