Title :
Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures
Author :
Fang, Zhong-Hui ; Chen, Kun-Ji ; Ma, Zhong-Yuan ; Liu, Guang-Yuan ; Qian, Xin-Ye ; Jiang, Xiao-Fan ; Zhang, Xian-Gao ; Huang, Xin-Fan
Author_Institution :
State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
Abstract :
Size-controlled nanocrystals (Si NCs) in floating gate MOS structure have been fabricated by thermal annealing of Si-rich SiNx layers with high ratio of Si/N. High resolution transmission electronic microscopy (HRTEM) reveals the size of Si NCs can be controlled by varying the thickness of Si-rich SiNx layer. Based on the analysis of XPS and Raman measurement, the relation between the size of Si NCs and the thickness of Si-rich SiNx is discussed.
Keywords :
MIS structures; Raman spectra; X-ray photoelectron spectra; annealing; elemental semiconductors; nanofabrication; nanostructured materials; silicon; silicon compounds; transmission electron microscopy; HRTEM; Raman spectra; Si-rich silicon nitride; SiNx-Si; XPS; floating gate MOS structure; high resolution transmission electronic microscopy; size-controlled nanocrystals; thermal annealing; Annealing; Atomic measurements; Capacitance-voltage characteristics; Nonvolatile memory; Periodic structures; Silicon; Silicon compounds;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667450
