Title :
A compact modeling of Si nanowire MOSFETs
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Compact modeling of a Si nanowire MOSFET is discussed. Framework and detailed expression of the compact model for a ballistic Si nanowire MOSFET are provided. The device characteristics of a thin Si nanowire MOSFET is shown as a model calculation, and some characteristic features of the device are explained. Then a new scattering model for a quasi- ballistic Si nanowire MOSFET is introduced, and the basic concept of the model is explained. The elastic backscattering and the energy relaxation are separately considered. The result of model calculation of a quasi-ballistic Si nanowire MOSFET is shown.
Keywords :
MOSFET; elemental semiconductors; nanowires; silicon; Si; ballistic nanowire MOSFET; elastic backscattering; energy relaxation; quasiballistic nanowire MOSFET; Capacitance; MOSFETs; Mathematical model; Nanoscale devices; Scattering; Silicon; Stimulated emission;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667451
