Title :
Advanced lateral power MOSFETs for power integrated circuits
Author :
Ng, Wai Tung ; Yoo, Abraham
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
CMOS compatible power devices have been an intensely pursued area in the past few decades. Power integrated circuit technologies are now accessible by many designers via popular foundry services. This paper is a brief review on modern integrated power transistors including the recently introduced CMOS compatible Orthogonal Gate extended drain MOSFETs (OG-EDMOS) and the lateral superjunction power FINFETs with embedded 3D trench gate. The characteristics of these devices are discussed and a perspective on the future trend of integrated power transistors is presented.
Keywords :
CMOS integrated circuits; power MOSFET; power integrated circuits; CMOS compatible orthogonal gate extended drain MOSFET; advanced lateral power MOSFET; embedded 3D trench gate; integrated power transistors; lateral superjunction power FINFET; power integrated circuit technologies; CMOS integrated circuits; Junctions; Logic gates; MOSFETs; Performance evaluation; Power transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667452
