Title :
Soft X-ray photoelectron spectroscopy study of activation and deactivation of impurities in shallow junctions
Author :
Tsutsui, Kazuo ; Tanaka, Masaoki ; Hoshino, Norifumi ; Nohira, Hiroshi ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Sasaki, Yuichiro ; Mizuno, Bunji ; Muro, Takayuki ; Kinoshita, Toyohiko ; Hattori, Takeo ; Iwai, Hiroshi
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state having the lowest biding energy is assigned to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for As. It was found that the state having higher binding energy was correlated with activated As, while another state was probably correlated with deactivated As cluster.
Keywords :
Hall effect; X-ray photoelectron spectra; arsenic; binding energy; bonds (chemical); boron; doping profiles; elemental semiconductors; etching; impurity distribution; impurity states; semiconductor doping; silicon; Hall effect; SXPES; Si:As; Si:B; arsenic cluster; arsenic doping; binding energy; boron clusters; boron doping; chemical bonding states; concentration depth profile; doped impurities; electrical impurity activation; impurity deactivation; shallow etching; silicon shallow junctions; soft X-ray photoelectron spectroscopy; Bonding; Chemicals; Etching; Impurities; Junctions; Silicon; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667454