Title :
Normalized Differential Conductance Spectroscopy to study the tunneling properties of post soft breakdown SiO2
Author :
Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Normalized Differential Conductance Spectroscopy (NDCS) has been used to investigate the tunneling properties of post soft breakdown SiO2. It is shown that the NDCS is capable of separating various components of tunneling current and determining its corresponding tunnel constants of post SBD SiO2. Therefore, the most important tunneling parameters: the effective mass of tunneling electron in SBD SiO2, and the effective potential barrier height at the Si/SiO2 interface can be determined independently from the NDCS.
Keywords :
effective mass; elemental semiconductors; interface states; silicon; silicon compounds; tunnelling; NDCS method; Si-SiO2; effective potential barrier height; normalized differential conductance spectroscopy; post soft breakdown SiO2; tunnel constants; tunneling current; tunneling electron effective mass; tunneling parameters; tunneling properties; Effective mass; Electric breakdown; Logic gates; Silicon; Spectroscopy; Tunneling; Voltage measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667459
