Title :
Carrier transport in (110) n- and p-MOSFETs
Author :
Uchida, Ken ; Takahashi, Tsunaki
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..
Keywords :
MOSFET; effective mass; electron mobility; hole mobility; (110) n-MOSFET; (110) p-MOSFET; carrier transport; effective mass model; electron mobility; hole mobility; nonparabolicity; quantum confinement effect; Effective mass; Logic gates; Magnetic fields; Oscillators; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667463
