Title :
An improved electron mobility model for wurtzite ZnO
Author :
Yang, Lin-An ; Yao, Qing-Yang ; Zhang, Xu-Hu ; Liu, Qi ; Hao, Yue
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
An improved analyticl model for the electron mobility in wurtzite ZnO is developed. The numerical results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The improved model describes properly the variation of the field-dependent mobility with carrier concentration and temperature, not only for room temperature but also for temperatures considerably higher than 300 K, showing good agreements with previous results.
Keywords :
II-VI semiconductors; Monte Carlo methods; electron mobility; zinc compounds; Monte Carlo transport simulation; carrier concentration; electron mobility model; field-dependent mobility; wurtzite; Electron mobility; Fitting; Monte Carlo methods; Numerical models; Temperature; Temperature dependence; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667465
