An improved electron mobility model for wurtzite ZnO

An improved analyticl model for the electron mobility in wurtzite ZnO is developed. The numerical results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The improved model describes properly the variation of the field-dependent mobility with carrier concentration and temperature, not only for room temperature but also for temperatures considerably higher than 300 K, showing good agreements with previous results.