Title :
Thermal and electrical characteristics of HfLaON with different nitridation annealings
Author :
Huang, Xiao-Dong ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
Based on MOS capacitors, this work aims to study the thermal and electrical characteristics of HfLaON with different nitridation treatments by evaluating the device properties and monitoring the induced changes.
Keywords :
MOS capacitors; annealing; hafnium compounds; nitridation; thermal analysis; HfLaON; MOS capacitor; device property; electrical characteristics; nitridation annealing; nitridation treatment; thermal characteristics; Annealing; Capacitance; Capacitance-voltage characteristics; Dielectrics; High K dielectric materials; Logic gates; Nitrogen;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667469
