Title :
GeSi/Si nanostructure formation by Ge ion implantation in (100) silicon wafer
Author :
Xu, Wenting ; Tu, Hailing ; Chang, Qing ; Xiao, Qinghua
Author_Institution :
Gen. Res. Inst. for Non-ferrous Metals, Beijing, China
Abstract :
In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×1016/cm2 with 150KeV and dose of 2.72×1016/cm2 with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion implantation could produce a high density of SiGe nanoclusters more than RTA. The results show that the SiGe nanostructure is matched with the Si matrix.
Keywords :
Ge-Si alloys; furnaces; ion implantation; nanoelectronics; rapid thermal annealing; (100) silicon wafer; GeSi-Si; furnace annealing; ion bombardment; ion implantation; nanostructure formation; rapid thermal annealing schedules; thermal annealing method; Annealing; Atomic layer deposition; Ion implantation; Nanoscale devices; Silicon; Silicon germanium; Strain; Ion implantation; SiGe nanostructure; annealing;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667470
