Title :
Hole-mobility enhancement in ultrathin strained Si0.5Ge0.5-on-insulator fabricated by Ge condensation technique
Author :
Yang, Haigui ; Wang, Dong ; Nakashima, Hiroshi
Author_Institution :
Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan
Abstract :
Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
Keywords :
Ge-Si alloys; MOSFET; condensation; germanium; hole mobility; silicon-on-insulator; Ge condensation technique; Si0.5Ge0.5; hole-mobility enhancement; residual compressive strain; strained-SGOI pMOSFET; ultrathin strained SiGe-on-insulator; Equations; Lattices; MOSFET circuits; Silicon; Silicon germanium; Strain; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667472
