• DocumentCode
    1632433
  • Title

    Hole-mobility enhancement in ultrathin strained Si0.5Ge0.5-on-insulator fabricated by Ge condensation technique

  • Author

    Yang, Haigui ; Wang, Dong ; Nakashima, Hiroshi

  • Author_Institution
    Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan
  • fYear
    2010
  • Firstpage
    905
  • Lastpage
    907
  • Abstract
    Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
  • Keywords
    Ge-Si alloys; MOSFET; condensation; germanium; hole mobility; silicon-on-insulator; Ge condensation technique; Si0.5Ge0.5; hole-mobility enhancement; residual compressive strain; strained-SGOI pMOSFET; ultrathin strained SiGe-on-insulator; Equations; Lattices; MOSFET circuits; Silicon; Silicon germanium; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667472
  • Filename
    5667472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1632433