Title :
A lateral power MOSFET with the extended trench gate in substrate
Author :
Lei, Yue ; Zhang, Bo
Author_Institution :
Sch. of Microelectron. & Solid -State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
Keywords :
electric breakdown; power MOSFET; breakdown voltage; extended trench gate; lateral power MOSFET; polysilicon gate electrode; specific on-resistance; Doping; Electric fields; Electrodes; Logic gates; Power MOSFET; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667473
