• DocumentCode
    1632447
  • Title

    A lateral power MOSFET with the extended trench gate in substrate

  • Author

    Lei, Yue ; Zhang, Bo

  • Author_Institution
    Sch. of Microelectron. & Solid -State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2010
  • Firstpage
    908
  • Lastpage
    910
  • Abstract
    A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
  • Keywords
    electric breakdown; power MOSFET; breakdown voltage; extended trench gate; lateral power MOSFET; polysilicon gate electrode; specific on-resistance; Doping; Electric fields; Electrodes; Logic gates; Power MOSFET; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667473
  • Filename
    5667473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1632447