• DocumentCode
    1632478
  • Title

    Optically-activated GaAs switches for ground penetrating radar and firing set applications

  • Author

    Loubriel, G.M. ; Aurand, J.F. ; Denison, G.J. ; Rinehart, L.F. ; Brown, D.J. ; Zutavern, F.J. ; Mar, A. ; O´Malley, M.W. ; Helgeson, W.D. ; Carin, L.

  • Author_Institution
    Dept. of High Power Electromagn., Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    2
  • fYear
    1999
  • Firstpage
    673
  • Abstract
    Optically activated, high gain GaAs switches are being tested for many different applications. Two such applications are ground penetrating radar (GPR) and firing set switches. The ability of high gain GaAs photoconductive semiconductor switches (PCSS) to deliver fast risetime pulses makes them suitable for their use in radars that rely on fast impulses. This type of direct time domain radar is uniquely suited for the detection of buried items because it can operate at low frequency, high average power, and close to the ground, greatly increasing power on target. We have demonstrated that a PCSS based system can be used to produce a bipolar waveform with a total duration of about 6 ns and with minimal ringing. Such a pulse is radiated and returns from a 55 gallon drum are presented. For firing sets, the switch requirements include small size, high current, DC charging, radiation hardness and modest longevity. We have switched 1 kA at 1 kV and 2.8 kA at 3 kV DC charge.
  • Keywords
    III-V semiconductors; gallium arsenide; photoconducting switches; pulsed power switches; radar equipment; 1 kA; 1 kV; 2.8 kA; 3 kV; DC charging; GaAs; bipolar waveform; buried items detection; direct time domain radar; fast risetime pulses; firing set applications; ground penetrating radar; high average power; high current; high gain GaAs photoconductive semiconductor switches; low frequency; minimal ringing; optically-activated GaAs switches; radiation hardness; Frequency; Gallium arsenide; Ground penetrating radar; Laser radar; Optical pulses; Optical switches; Photoconducting devices; Power semiconductor switches; Radar detection; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-5498-2
  • Type

    conf

  • DOI
    10.1109/PPC.1999.823602
  • Filename
    823602