Title :
High mobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2 /TiN gate stack
Author :
Zhang, B. ; Yu, W. ; Zhao, Q.T. ; Hartmann, J. -M ; Lupták, R. ; Buca, D. ; Bourdelle, K. ; Wang, X. ; Mantl, S.
Abstract :
P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ~200 cm2/V·s in the strong inversion regime.
Keywords :
Ge-Si alloys; MOSFET; hafnium compounds; silicon-on-insulator; titanium compounds; HfO2-TiN; SOI p-MOSFET; Si-Si0.5Ge0.5; gate dielectric; hole mobility; metal gate; split C-V technique; Capacitance-voltage characteristics; Dielectrics; Logic gates; MOSFET circuits; Resistance; Silicon; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667475
