Highly scaled block oxide bulk-MOSFETs with excellent short-channel characteristics

This work presents a preliminary performance comparison between the new and conventional block oxide (BO) bulk-MOSFETs that suggests the proposed BO structure as a candidate for scaling planar CMOS to 16 nm generation and beyond. Also, the combined application of the isolation-last process (ILP) and the BO process provides a method of forming a new BO (NBO) structure that diminishes the short-channel effects significantly. More importantly, the single-crystal Si source/drain is achieved by the incorporation of the existing partially-insulating techniques into a NBO technology. The simulation results show that using the additional body regions which are the product of the ILP can help NBO MOSFETs achieve the ITRS roadmap requirements for high-performance applications.