DocumentCode
1632527
Title
An adaptive bias controlled power amplifier with a load-modulated combining scheme for high efficiency and linearity
Author
Jeonghyeon Cha ; Youngoo Yang ; Bumjae Shin ; Bumman Kim
Author_Institution
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Kyoungbuk, South Korea
Volume
1
fYear
2003
Firstpage
81
Abstract
This paper presents a highly efficient linear power amplifier with an adaptive bias control circuit. In the amplifier, two amplifiers are power-combined using load modulation networks and then gate biases are controlled according to the input signal envelope. The gate voltage shapes of the two amplifiers have been optimized by envelope simulation to maximize the power added efficiency for the ACLR of -30 dBc. For verification, an adaptively controlled power amplifier has been implemented at 2.14 GHz using 4 watts PEP LDMOSFET´s and its bias circuit were constructed based on simulated control shapes. The performances of the amplifier were compared with the class AB and Doherty amplifiers using a one-tone and forward-link WCDMA signals. The measured PAE of the amplifier is 41 % at -30 dBc ACLR, while those of the class AB and Doherty amplifiers are 24.5 % and 28.1 %, respectively.
Keywords
MOSFET circuits; UHF power amplifiers; code division multiple access; power combiners; 2.14 GHz; 4 W; 41 percent; ACLR; Doherty amplifier; PEP LDMOSFET; WCDMA signal; adaptive bias control circuit; envelope simulation; linear power amplifier; load modulation network; power added efficiency; power combiner; Adaptive control; Circuit simulation; High power amplifiers; Linearity; Multiaccess communication; Power amplifiers; Power generation; Power system harmonics; Programmable control; Shape control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210888
Filename
1210888
Link To Document