Title :
RF characteristics of a high voltage LDMOSFET
Author :
Hu, C.M. ; Hung, C.Y. ; Gong, J.
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed in this paper. The simulated results of this LDMOS RF switch exhibit excellent agreement to the measured data over the frequency range from DC to 3GHz. Based on this small signal LDMOSFET model, advantageous RF IC applications with LDMOS technology could be realized.
Keywords :
CMOS integrated circuits; power MOSFET; radiofrequency integrated circuits; CMOS technology; LDMOSFET; RF switching circuit; RFIC; power handling capability; series resistance; stack-transistor structure; Frequency measurement; Integrated circuit modeling; Logic gates; Mathematical model; Radio frequency; Resistance; Scattering parameters; RF LDMOS; RF switch; parameter extraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667479
