Title :
InP HBT transimpedance amplifier for 43 Gb/s optical link applications
Author :
Nosal, Z.M. ; Broekaert, T.P.E.
Author_Institution :
Inphi Corp., Westlake Village, CA, USA
Abstract :
Transimpedance amplifiers with the bandwidth in the 50 GHz range for applications in long haul optical networks are presented. Transimpedance value is in the 220 to 300 /spl Omega/ range, integrated input noise current /spl ap/ 7.5 - 8.5 /spl mu/A (0 - 60 GHz) and the output amplitude is between 600 mV/sub pp/ and 900 mV/sub pp/ (single ended) - dependent on the version. Circuits are designed in an InP HBT technology and consume 200 to 300 mW with +3.3 V supply voltage.
Keywords :
III-V semiconductors; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; optical communication equipment; wideband amplifiers; 200 to 300 mW; 3.3 V; 43 Gbit/s; 50 GHz; InP; InP HBT transimpedance amplifier; optical link; Bandwidth; Circuits; Heterojunction bipolar transistors; Indium phosphide; Noise level; Optical amplifiers; Optical fiber communication; Optical fiber networks; Optical noise; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210896
