Title :
Characterization of self-aligned metal electrodes poly-Si TFTs with schottky barrier contact
Author :
Chen, Jie ; Wang, Mingxiang ; Lv, Ping ; Wong, Man
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
A new type of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional poly-Si TFTs are found, and are attributed to the presence of Schottky barriers at the channel ends.
Keywords :
Schottky barriers; electrodes; elemental semiconductors; silicon; thin film transistors; Schottky barrier contact; Si; polycrystalline silicon thin film transistor; self-aligned metal electrode; Current measurement; Electrodes; Junctions; Logic gates; Resistance; Schottky barriers; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667484
